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Product Description
Silicone Carbide Ceramic
Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. This series ceramics have been widely used in petroleum, chemical, automotive, mechanical and aerospace industries because of their excellent resistance to thermal shock, high temperatures, oxidation and chemical corrosion.
Properties :
Low density;
High strength;
High hardness;
High elastic modulus;
Low thermal expansion;
High thermal conductivity;
Superior chemical inertness;
Excellent thermal shock resistance;
Isolated wave absorption performance.
Application:
LED-TV LCD-TV
Notebook
M/B(Mother board)
Power Transistor Traic
Power Module
Chip IC MOS IGBT
Network/ADSL
Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength give this material exceptional thermal shock resistant qualities.
Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces.
The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).
Contact ways:
Silicone Carbide Ceramic
Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. This series ceramics have been widely used in petroleum, chemical, automotive, mechanical and aerospace industries because of their excellent resistance to thermal shock, high temperatures, oxidation and chemical corrosion.
Properties :
Low density;
High strength;
High hardness;
High elastic modulus;
Low thermal expansion;
High thermal conductivity;
Superior chemical inertness;
Excellent thermal shock resistance;
Isolated wave absorption performance.
Application:
LED-TV LCD-TV
Notebook
M/B(Mother board)
Power Transistor Traic
Power Module
Chip IC MOS IGBT
Network/ADSL
Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength give this material exceptional thermal shock resistant qualities.
Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces.
The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).
| PROPERTIES TABLE | |||
| Item | Value | Unit | Remark |
| Color | Green | --- | Visual |
| Porosity | 20 | % | CNS619 |
| Water Absorption | 15.77 | % | CNS619 |
| Mohs' Hardness | 5~6 | N/mm2 | DIN EN101-1992 |
| Flexural Strength | 47.5 | Kgf/cm2 | CNS12701(1990) |
| Resistance Insulation | 10 | GΩ | 1000VDC,1mimute |
| Thermal Conductivity | 10 | w/m-k | --- |
| Max Use Temperature | <700 | ºC | --- |
| Dielectric Withstanding Voltage | 10 | KV | --- |
| Thermal Expansion Coefficient | 4.13 | 10¯6 | --- |
| Main Composition | 90%↑ | SiC | --- |
| Size | 10x10 / 20x20 / 30x30 mm | ||
Contact ways:
Mobile:+86 13430438515
website: www.jrftdz.com
Address: 3th Floor,Block 2,Yinghe industrial Zone,Dalang Village,LongHua new District,ShenZhen City,China